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parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 4.2 i d @ t a = 70c continuous drain current, v gs @ 4.5v 3.4 a i dm pulsed drain current 17 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 0.02 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 09/18/06
www.irf.com 1 IRF1902UPBF hexfet power mosfet v dss r ds(on) max (m i d 20v 85@v gs = 4.5v 4.0a 170@v gs = 2.7v 3.2a so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a these n-channel hexfet ? power mosfet s from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique description ultra low on-resistance n-channel mosfet surface mount available in tape & reel lead-free symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance pd - 96066b

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.5a, v gs = 0v t rr reverse recovery time ??? 38 57 ns t j = 25c, i f = 2.5a q rr reverse recovery charge ??? 42 63 nc di/dt = 100a/s source-drain ratings and characteristics 17 4.2 repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on 1 in square cu board parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.019 ??? v/c reference to 25c, i d = 1ma ??? ??? 85 v gs = 4.5v, i d = 4.0a ??? ??? 170 v gs = 2.7v, i d = 3.2a v gs(th) gate threshold voltage 0.70 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 5.6 ??? ??? s v ds = 10v, i d = 4.0a ??? ??? 1.0 v ds = 16v, v gs = 0v ??? ??? 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? 100 v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v q g total gate charge ??? 5.0 7.5 i d = 4.2a q gs gate-to-source charge ??? 1.2 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 1.8 ??? v gs = 4.5v t d(on) turn-on delay time ??? 5.9 ??? v dd = 10v t r rise time ??? 13 ??? i d = 1.0a t d(off) turn-off delay time ??? 23 ??? r g = 53 ? t f fall time ??? 19 ??? v gs = 4.5v c iss input capacitance ??? 310 ??? v gs = 0v c oss output capacitance ??? 130 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 55 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current

s d g

www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 25c vgs top 7.0v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 150c vgs top 7.0v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 4.2a

4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 2 4 5 6 0 1 2 4 5 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.0a v = 10v ds v = 16v ds 0.0 0.5 1.0 1.5 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 4.0 6.0 8.0 v gs, gate -to -source voltage (v) 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 4.2a 0 5 10 15 20 i d , drain current (a) 0.000 0.500 1.000 1.500 2.000 2.500 3.000 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v v gs = 2.7v

www.irf.com 7 fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 p o w e r ( w )

8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking

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www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2006

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